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  microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our website at www.microsemi.com or contact our factory direct microsemi corporation 3000 oakmead v illage drive, santa clara, ca 95 051-0808 tel. 408 / 986-8031 TAN250A 250 watts, 50 volts, pulsed avionics 960 - 1215 mhz general description the TAN250A is a high powered common base bipolar transistor. it is designed for pulsed systems in the frequency band 960-1215 mhz. the device has gold thin-film metallization and diffused ballasting for proven highest mttf. the transistor includes input and output prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. case outline 55aw, style 1 absolute maximum ratings maximum power dissipation device dissipation @25 c 575 w maximum voltage and current collector to base voltage (bv ces ) 60 v emitter to base voltage (bv ebo ) 4.0 v collector current (i c ) 30 a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out f = 960-1215 mhz 250 w p in power input vcc = 50 volts 60 w p g power gain pw = 20 sec 6.2 7.0 db c collector efficiency df = 5% 40 % vswr load mismatch tolerance f = 1090 mhz 5:1 functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 20 ma 4.0 v bv ces collector to emitter breakdown ic = 25 ma 60 v h fe dc ? current gain vce = 5v, ic = 1 a 10 jc 2 thermal resistance .3 c/w note 1: at rated output power and pulse conditions 2. at rated pulse conditions . revision a, august 2010
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our website at www.microsemi.com or contact our factory direct microsemi corporation 3000 oakmead v illage drive, santa clara, ca 95 051-0808 tel. 408 / 986-8031 TAN250A june 1996
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our website at www.microsemi.com or contact our factory direct microsemi corporation 3000 oakmead v illage drive, santa clara, ca 95 051-0808 tel. 408 / 986-8031
microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our website at www.microsemi.com or contact our factory direct microsemi corporation 3000 oakmead v illage drive, santa clara, ca 95 051-0808 tel. 408 / 986-8031


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